D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 24,Pages 37

Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon

D. A. Kudriashov^a, A. S. Gudovskikh^ab, A. A. Maksimova^b, A. I. Baranov^a, A. V. Uvarov^a, I. A. Morozov^a

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: The possibility of evaluation the degree of damage to the near-surface layer of $p$-type silicon using a selective contact based on MoO$_{x}$/$p$-Si is shown. A strong sensitivity of the current-voltage characteristics to the states on the silicon surface formed during the deposition of silicon oxide by magnetron sputtering is demonstrated.

Keywords: silicon, selective contact, plasma-induced degradation.

Received: 22.07.2020
Revised: 16.09.2020
Accepted: 16.09.2020

DOI: 10.21883/PJTF.2020.24.50427.18478