Electrical contacts to InP-based structures with a Zn-doped subcontact layer to $p$-InP

The paper presents the results of using sub-contact layers with a band gap from 0.35 to 0.8 eV to obtain low-resistance electrical contacts to $p$-InP. An experimental dependence of the contact resistance on the band gap of the sub-contact material In$_{x}$Ga$_{1-x}$As is obtained.