Smoothing the surface of gallium antimonide

The results of studying the conditions for obtaining an atomically smooth surface of GaSb substrates are presented for the first time. It has been shown experimentally that it is possible to improve the surface quality of the samples by changing the annealing conditions. The smallest roughness of 1.3 nm was obtained for an annealing time of 16 min at a temperature of 650$^\circ$C in a flow of trimethylantimony and H$_2$.