S. S. Rochas, I. I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, A. V. Babichev, V. V. Andryushkin, V. N. Nevedomskiy, D. V. Denisov, L. Ya. Karachinsky, A. Yu. Egorov, V. E. Bugrov, “The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 22,Pages <nobr>27

This article is cited in 2 papers

The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency

S. S. Rochas^a, I. I. Novikov^a, A. G. Gladyshev^a, E. S. Kolodeznyi^a, A. V. Babichev^a, V. V. Andryushkin^a, V. N. Nevedomskiy^b, D. V. Denisov^c, L. Ya. Karachinsky^a, A. Yu. Egorov^d, V. E. Bugrov^a

^a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Ioffe Institute, St. Petersburg
^c Saint Petersburg Electrotechnical University "LETI"
^d Connector Optics LLC, St. Petersburg

Abstract: We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-$\mu$m spectral range. The heterostructures were characterized by measuring photoluminescence (PL) emission and X-ray diffraction. It is established that variation of the ratio of quantum-well and barrier-layer thicknesses in the SL allows controlled shift of the PL peak position for lasing in the 1.3-$\mu$m range at almost constant PL efficiency.

Keywords: vertical-cavity surface-emitting laser, active region, superlattice, quantum well, molecular-beam epitaxy.

Received: 11.06.2020
Revised: 23.07.2020
Accepted: 04.08.2020

DOI: 10.21883/PJTF.2020.22.50304.18421