A. S. Grashchenko, A. S. Kukushkin, A. V. Osipov, “Coating of nanostructured profiled Si surface with a SiC layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 20,Pages <nobr>19

This article is cited in 1 paper

Coating of nanostructured profiled Si surface with a SiC layer

A. S. Grashchenko^a, A. S. Kukushkin^ab, A. V. Osipov^a

^a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: The method has been developed for coating of a profiled Si surface with a SiC layer, which completely preserves its original morphology of the Si surface. The SiC synthesis conditions are determined under which the initial Si surface profile is transformed into a profile coated with a SiC layer without geometric distortions. It has been experimentally proved that the critical synthesis temperature at which this coating is formed is a temperature equal to 1050$^\circ$C.

Keywords: silicon carbide, atom substitution method, profiled silicon, semi-polar aluminum nitride, semi-polar gallium nitride, protective coatings.

Received: 30.06.2020
Revised: 15.07.2020
Accepted: 15.07.2020

DOI: 10.21883/PJTF.2020.20.50150.18447