Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD

When studying doped anisotypic heterostructures with Ga$_{1-x}$In$_{x}$As$_{y}$P$_{1-y}$ layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga$_{1-x}$In$_{x}$As$_{y}$P$_{1-y}$ layer from the side of the substrate in some of the samples, along which the arsenic content $(y)$ increases from the interface with the InP layer to the surface of the structure by a $\Delta y$ value of up to 0.15, while the content of elements of the third group $(x)$ remains constant.