Investigation of passivating and protecting methods for multijunction solar cells

Methods for passivation and protection of $p$–$n$ junctions at places of their emergence at the lateral surface of a mesa structure and for sealing-off of multijunction solar cells based on a GaInP/GaAs/Ge structure have been studied. Protective coatings based on silicon nitride and silicone layers were examined by analyzing dark current–voltage characteristics of the solar cells. The distribution of the electroluminescence was analyzed.