Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon

AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual $n^+$-GaAs substrate, whereas their individual addressing is achieved by placing them $p$-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, thermal resistance, and spectral characteristics was revealed. Microdisks lase in continuous-wave mode without external cooling with the threshold current density of 0.7 kA/cm$^2$. Lasing wavelength remains stable ($<$ 0.1 nm/mA) against injection current increment.