Nanodimensional CoSiO films obtained by ion implantation on a СoSi$_{2}$ surface

The morphology, composition, and electronic properties of the CoSiO film obtained on the СoSi$_{2}$/Si(111) surface by implantation of O$_2^+$ ions in combination with annealing were studied. The parameters of energy bands are determined and information on the density of state of electrons of the valence band and conduction band is obtained. In particular, it was shown that the band gap of this film is $\sim$2.4 eV.