A. S. Tarasov, A. V. Lukyanenko, I. A. Bondarev, I. A. Yakovlev, S. N. Varnakov, S. G. Ovchinnikov, N. V. Volkov, “Spin accumulation in the Fe$_{3}$Si/$n$-Si epitaxial structure and related electric bias effect”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 13,Pages 43

This article is cited in 1 paper

Spin accumulation in the Fe$_{3}$Si/$n$-Si epitaxial structure and related electric bias effect

A. S. Tarasov^ab, A. V. Lukyanenko^ab, I. A. Bondarev^ab, I. A. Yakovlev^a, S. N. Varnakov^a, S. G. Ovchinnikov^ab, N. V. Volkov^ab

^a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^b Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk

Abstract: The electrical injection of a spin-polarized current into silicon was demonstrated in the Fe$_{3}$Si/$n$-Si epitaxial structure. The spin accumulation effect was studied by measuring local and nonlocal voltage signals in a specially prepared 4-terminal device. The detected effect of electrical bias on the spin signal is discussed and compared with other results reported for ferromagnet/semiconductor structures.

Keywords: iron silicide, ferromagnet/semiconductor structure, Hanle effect, spin accumulation, electrical spin injection.

Received: 08.11.2019
Revised: 19.02.2020
Accepted: 06.04.2020

DOI: 10.21883/PJTF.2020.13.49591.18106