The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters

The electroluminescence spectra and the dependences of the open circuit voltage on the photogenerated current are studied for GaAs solar cells the $p$ – $n$ junction of which contained various numbers of rows $(r)$ of quantum objects based on In$_{0.4}$Ga$_{0.6}$As layers. For all samples, the saturation current $(J_0)$, the band gap of the quantum object $(E^Q_g)$, and the open circuit voltage drop $(\Delta V_{oc})$ relative to the reference ($r$ = 0) sample are obtained. A model adequately describing the dependences $J_0(r)$ and $\Delta V_{oc}(r)$ is proposed, and the model parameters are found, including the current invariant $J_z$ = 1.4 $\times$ 10$^5$ A/cm$^2$, which uniquely relates the saturation current to the band gap of the quantum object.