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JOURNALS // Pisma v Zhurnal Tekhnicheskoi Fiziki // Archive

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020 Volume 46, Issue 11, Pages 26–30 (Mi pjtf5088)

This article is cited in 1 paper

An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy

A. V. Myasoedov, D. V. Nechaev, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, V. N. Zhmerik

Ioffe Institute, St. Petersburg

Abstract: The results of transmission electron microscopy study and X-ray diffraction analysis of AlN/$c$-Al$_{2}$O$_{3}$ templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy are presented. It is shown that AlN buffer layers with faceted surface morphology provide a much higher threading dislocations density reduction then with smooth layers. The filtering action of ultrathin GaN insertions is confirmed.

Keywords: AlN/$c$-sapphire templates, threading dislocations, molecular beam epitaxy, X-ray diffractometry.

Received: 10.03.2020
Revised: 10.03.2020
Accepted: 11.03.2020

DOI: 10.21883/PJTF.2020.11.49495.18280


 English version:
Technical Physics Letters, 2020, 46:6, 543–547

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© Steklov Math. Inst. of RAS, 2024