The influence of a single charged interface trap on the subthreshold drain current in FinFETs with different fin shapes

The influence of the channel shape in a finned (vertical) field-effect transistor (FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the transistors with rectangular and trapezoidal fin cross sections. It is established that, in a subthreshold region of gate voltages, a single charge trapped at the fin top induces RTN of lower amplitude in the case of a trapezoidal cross sections as compared to that in a transistor with rectangular cross sections. However, a single charge built in the middle of the fin side wall induces RTN of significantly higher amplitude in case of the fin with trapezoidal cross section.