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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020 Volume 46, Issue 2, Pages 15–18 (Mi pjtf5207)

This article is cited in 2 papers

Structure and ferroelectric properties of thin heteroepitaxial NaNbO$_{3}$ films obtained by RF cathode sputtering

A. V. Pavlenkoab, D. V. Stryukova, N. V. Ter-Oganessianb

a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b Research Institute of Physics, Southern Federal University

Abstract: Thin films of sodium niobate (NaNbO3) on a MgO(001) substrate with a predeposited SrRuO$_3$ layer were obtained for the first time by the method of RF cathode sputtering in an oxygen atmosphere. X-ray diffraction data showed the obtained films to be single-phase and single-crystalline. The parameters of the unit cells of NaNbO$_3$ and SrRuO$_3$ layers in the tetragonal approximation were found to be $c_{\mathrm{NaNbO}_3}$ = 0.3940 (1) nm, $a_{\mathrm{NaNbO}_3}$ = 0.389 (1) nm; $c_{\mathrm{SrRuO_3}}$ = 0.4004 (1) nm, and $a_{\mathrm{SrRuO}_3}$ = 0.392 (3) nm. Misfit strain of the unit cell of NaNbO$_3$ amounted to $\varepsilon_{33}$ = 0.007 and $\varepsilon_{11}$ = 0.002. The results of dielectric and piezoelectric measurements showed that the films occurred in a ferroelectric state.

Keywords: thin films, sodium niobate, dielectric characteristics, unit cell deformation.

Received: 23.09.2019
Revised: 09.10.2019
Accepted: 14.10.2019

DOI: 10.21883/PJTF.2020.02.48945.18046


 English version:
Technical Physics Letters, 2020, 46:1, 62–65

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