M. V. Dorokhin, P. B. Demina, E. I. Malysheva, A. V. Kudrin, M. V. Ved, A. V. Zdoroveyshchev, “Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 2,Pages 40

This article is cited in 1 paper

Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures

M. V. Dorokhin, P. B. Demina, E. I. Malysheva, A. V. Kudrin, M. V. Ved, A. V. Zdoroveyshchev

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The low-temperature circularly polarized electroluminescence in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures was investigated. It was found that the degree of circular polarization weakly depends on the spatial separation of the active region and the magnetic layer and is retained even at a spacer layer thickness of 12 nm. The revealed effect is associated with the long-range interaction of carriers with Mn ions.

Keywords: diluted magnetic semiconductors, circular polarization, heterostructures, exchange interaction.

Received: 10.10.2019
Revised: 24.10.2019
Accepted: 24.10.2019

DOI: 10.21883/PJTF.2020.02.48952.18069