N. N. Bogachev, N. G. Gusein-zade, I. V. Zhluktova, S. Yu. Kazantsev, V. A. Kamynin, S. V. Podlesnykh, V. E. Rogalin, A. I. Trikshev, S. A. Filatova, V. B. Tsvetkov, D. V. Shokhrin, “Semiconductor plasma antennas formed by laser radiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 24,Pages <nobr>6

This article is cited in 6 papers

Semiconductor plasma antennas formed by laser radiation

N. N. Bogachev^abc, N. G. Gusein-zade^abc, I. V. Zhluktova^a, S. Yu. Kazantsev^a, V. A. Kamynin^a, S. V. Podlesnykh^a, V. E. Rogalin^d, A. I. Trikshev^a, S. A. Filatova^a, V. B. Tsvetkov^ae, D. V. Shokhrin^b

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b MIREA — Russian Technological University, Moscow
^c Russian National Research Medical University named after N. I. Pirogov
^d Institute of Problems of Electrophysics of the Russian Academy of Sciences, St. Petersburg
^e National Engineering Physics Institute "MEPhI", Moscow

Abstract: Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.

Keywords: plasma antenna, electron-hole plasma, semiconductor, silicon, germanium, laser radiation, microwave radiation.

Received: 15.08.2019
Revised: 15.08.2019
Accepted: 09.09.2019

DOI: 10.21883/PJTF.2019.24.48793.18015n