V. V. Zabrodskii, P. N. Aruev, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev, “Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 24,Pages <nobr>10

This article is cited in 2 papers

Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range

V. V. Zabrodskii, P. N. Aruev, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev

Ioffe Institute, St. Petersburg

Abstract: Quantum photoresponse yield of a silicon XUV avalanche photodiode prototype with 1.5-mm-diameter active region has been studied in the 320–1100 nm wavelength range. It is established that the proposed avalanche photodiode has the external quantum efficiency above 20 electron/photon in the 580–1000 nm range at a reverse bias voltage of 485 V.

Keywords: avalanche photodiode, XUV range, silicon, dark current.

Received: 23.04.2019
Revised: 11.09.2019
Accepted: 11.09.2019

DOI: 10.21883/PJTF.2019.24.48794.17853