L. S. Lunin, O. V. Devitsky, I. A. Sysoev, A. S. Pashchenko, I. V. Kasyanov, D. A. Nikulin, V. A. Irkha, “Ion-beam deposition of thin AlN films on Al$_{2}$O$_{3}$ substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 24,Pages 21

This article is cited in 4 papers

Ion-beam deposition of thin AlN films on Al$_{2}$O$_{3}$ substrate

L. S. Lunin^ab, O. V. Devitsky^ac, I. A. Sysoev^c, A. S. Pashchenko^ab, I. V. Kasyanov^c, D. A. Nikulin^c, V. A. Irkha^a

^a Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
^b Platov South Russian State Polytechnic University, Novocherkassk, Rostov oblast, Russia
^c North-Caucasus Federal University, Stavropol, Russia

Abstract: Thin aluminum nitride (AlN) films on sapphire (Al$_{2}$O$_{3}$) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire.

Keywords: ion-beam deposition, wide-gap semiconductors, aluminum nitride, gallium nitride, sapphire.

Received: 31.07.2019
Revised: 31.07.2019
Accepted: 17.09.2019

DOI: 10.21883/PJTF.2019.24.48797.18006