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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 45, Issue 22, Pages 7–11 (Mi pjtf5259)

The influence of the voltage rise time on transient processes during current overload in stabilized second-generation HTSC wires

V. A. Malginov

P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow

Abstract: The effect of spontaneous reverse transition of the stable HTSC tape from the normal to the resistive state with rapid input voltage and current overload at alternating current is detected. For the first time it is established that during the occurrence of this effect and at the thickness of the stabilizer above 13 $\mu$m, the main heat releases occur in the copper stabilizer and are effectively discharged into the refrigerant, which significantly reduces the heating of the HTSC layer. In this case, the resistance of the secondary resistive state decreases and the time of its existence increases. These data make it possible to use the detected effect to increase the time of current limitation and reliability of HTSC current limiters.

Keywords: HTSC tape, layered structure, stabilizing layer, voltage jump, resistive state.

Received: 02.04.2019
Revised: 22.07.2019
Accepted: 23.07.2019

DOI: 10.21883/PJTF.2019.22.48640.17822


 English version:
Technical Physics Letters, 2019, 45:11, 1122–1126

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© Steklov Math. Inst. of RAS, 2024