B. S. Shvetsov, A. N. Matsukatova, A. A. Minnekhanov, A. A. Nesmelov, B. V. Goncharov, D. A. Lapkin, M. N. Martyshov, P. A. Forsh, V. V. Ryl'kov, V. A. Demin, A. V. Emelyanov, “Poly-para-xylylene-based memristors on flexible substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 21,Pages <nobr>40

This article is cited in 14 papers

Poly-para-xylylene-based memristors on flexible substrates

B. S. Shvetsov^ab, A. N. Matsukatova^ab, A. A. Minnekhanov^b, A. A. Nesmelov^b, B. V. Goncharov^b, D. A. Lapkin^b, M. N. Martyshov^a, P. A. Forsh^bc, V. V. Ryl'kov^bd, V. A. Demin^b, A. V. Emelyanov^bc

^a Lomonosov Moscow State University
^b National Research Centre "Kurchatov Institute", Moscow
^c Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies, Moscow Institute of Physics and Technology, Moscow, Russia
^d Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences

Abstract: Flexible memristive structures based on poly-para-xylelene layers, which exhibit stable resistive switchings and are resistant to bendings with radii up to 10 mm, have been prepared and studied. A two-step scheme of setting the resistive state of the memristive structure is proposed, which is based on monitoring the compliance current passing through the structure. The results obtained allow memristive structures based on poly-para-xylelene layers to be used for neuromorphic computational systems and biocompatible “wearable” electronics.

Keywords: memristor, organic electronics, poly-para-xylelene, flexible structures.

Received: 11.07.2019
Revised: 11.07.2019
Accepted: 17.07.2019

DOI: 10.21883/PJTF.2019.21.48473.17974