G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev, M. P. Scheglov, T. B. Popova, B. Ya. Ber, D. Yu. Kazantsev, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 20,Pages <nobr>22

This article is cited in 1 paper

Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates

G. S. Gagis^ab, A. S. Vlasov^a, R. V. Levin^a, A. E. Marichev^a, M. P. Scheglov^a, T. B. Popova^a, B. Ya. Ber^a, D. Yu. Kazantsev^a, D. V. Chistyakov^c, V. I. Kuchinskii^ab, V. I. Vasil’ev^ab

^a Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: Luminescence properties of epilayers of Ga$_{1-x}$In$_{x}$As$_{y}$P$_{1-y}$ (GaInAsP) solid solutions with graded content of Group V elements ($\Delta y$ up to 0.08 over a total thickness of about 1 $\mu$m) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large $\Delta y$ values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.

Keywords: photoluminescence, solid solutions, heterostructures, photovoltaic converters.

Received: 28.06.2019
Revised: 28.06.2019
Accepted: 01.07.2019

DOI: 10.21883/PJTF.2019.20.48388.17954