F. I. Zubov, È. I. Moiseev, G. O. Kornyshov, N. V. Kryzhanovskaya, Yu. M. Shernyakov, A. S. Payusov, M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, A. E. Zhukov, “Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 19,Pages <nobr>37

This article is cited in 7 papers

Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots

F. I. Zubov^a, È. I. Moiseev^a, G. O. Kornyshov^a, N. V. Kryzhanovskaya^a, Yu. M. Shernyakov^b, A. S. Payusov^b, M. M. Kulagina^b, N. A. Kalyuzhnyy^b, S. A. Mintairov^b, M. V. Maksimov^a, A. E. Zhukov^a

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 $\mu$m is formed near the side surface, which leads to a decrease in the effective current flow area.

Keywords: diode laser, microlaser, quantum dots, current-voltage characteristic.

Received: 19.06.2019
Revised: 19.06.2019
Accepted: 20.06.2019

DOI: 10.21883/PJTF.2019.19.48316.17938