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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 45, Issue 16, Pages 37–40 (Mi pjtf5350)
The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires

N. R. Grigor'evaa, I. V. Shtromab, R. V. Grigor'eva, I. P. Soshnikovbcd, R. R. Reznike, Yu. B. Samsonenkob, N. V. Sibirevae, G. E. Cirlincf

a Saint Petersburg State University
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
d Ioffe Institute, St. Petersburg
e St. Petersburg National Research University of Information Technologies, Mechanics and Optics
f Saint Petersburg Electrotechnical University "LETI"

Abstract: We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial $n$-type GaAs/Al$_{x}$Ga$_{1-x}$As ($x$ = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a $p$-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.

Keywords: molecular beam epitaxy, semiconductors, nanowires, photoelectric properties, defects, gallium arsenide, silicon.

Received: 07.05.2019
Revised: 07.05.2019
Accepted: 13.05.2019

DOI: 10.21883/PJTF.2019.16.48155.17870


 English version: Technical Physics Letters, 2019, 45:8, 835–838

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