T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 15,Pages <nobr>21

This article is cited in 6 papers

Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors

T. V. Malin^a, D. S. Milakhin^a, I. A. Aleksandrov^a, V. E. Zemlyakov^b, V. I. Egorkin^b, A. A. Zaitsev^b, D. Yu. Protasov^ac, A. S. Kozhukhov^a, B. Ya. Ber^d, D. Yu. Kazantsev^d, V. G. Mansurov^a, K. S. Zhuravlev^ae

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b National Research University of Electronic Technology
^c Novosibirsk State Technical University
^d Ioffe Institute, St. Petersburg
^e Novosibirsk State University

Abstract: In this paper the possibility of obtaining the intentionally undoped high resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors by ammonia molecular beam epitaxy was demonstrated. The growth conditions based on background impurity concentrations and point defects calculations for different gallium and ammonia flows ratios were optimized.

Keywords: GaN, intrinsic point defects, background impurities, AlGaN/GaN, HEMT, NH$_3$-MBE.

Received: 19.04.2019
Revised: 24.04.2019
Accepted: 24.04.2019

DOI: 10.21883/PJTF.2019.15.48081.17844