Characteristics of a silicon avalanche photodiode for the near-IR spectral range

Sensitivity in 400 – 1150 nm spectral range, dark current and dynamic characteristics have been tested of a developed silicon avalanche photodiode with an active diameter of 1.5 mm. Developed Si APD possesses: photosensitivity 80–85 A/W in 900 – 1010 nm spectral range, 1.5 nA dark current, rise and fall time less than 2.5 ns with a bias voltage of 350 V.