The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia

Resistive switching of memristive structures based on films of yttria stabilized zirconia (40 nm), irradiated with Si$^{+}$ ions with an energy of 6 keV and a dose of 5.4 $\times$ 10$^{15}$ cm$^{-2}$, was studied. It is established that ion irradiation leads to an increase in the stability of the parameters of resistive switching. This improvement is due to the fact that the diameter of the filaments as a result of irradiation is limited to the lateral size of the region of the individual cascades of displacement. Oxidation of such filaments in the process of resistive switching occurs more efficiently, which leads to an increase in resistance in a high resistance state.