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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 45, Issue 14, Pages 36–39 (Mi pjtf5379)

This article is cited in 6 papers

Insulating GaN epilayers co-doped with iron and carbon

V. V. Lundina, A. V. Sakharova, E. E. Zavarina, D. A. Zakgeima, E. Yu. Lundinaa, P. N. Brunkova, A. F. Tsatsul'nikovb

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg

Abstract: The morphology and electrical properties of doped semi-insulating gallium nitride (GaN) epilayers have been studied. It was found that doping-induced improvement of the insulating properties of GaN epilayers with increased level of doping with carbon or iron is limited by the accompanying deterioration of surface morphology. The character of impurity-related morphology development is different for the two dopants. It is established that the co-doping with carbon and iron allows planarity of the GaN surface to be retained along with a significant improvement of insulating properties of epilayers.

Keywords: high-electron-mobility transistor, HEMT, semi-insulating gallium nitride, leak current, co-doping.

Received: 20.02.2019
Revised: 11.04.2019
Accepted: 11.04.2019

DOI: 10.21883/PJTF.2019.14.48022.17738


 English version:
Technical Physics Letters, 2019, 45:7, 723–726

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