Abstract:
Molecular beam epitaxy techniques were used to grow a quantum-cascade laser (QCL) heterostructure based on an In$_{0.53}$Ga$_{0.47}$As/Al$_{0.48}$In$_{0.52}$As heteropair lattice-matched with an InP substrate. InP layers were used to form an optical waveguide. The obtained QCL heterostructure ensured room-temperature lasing in the 8-$\mu$m wavelength range at a maximum output optical power of 0.45 W from one facet in a standard ridge geometry of the Fabry–Pérot cavities formed by cleaved facets.