A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev, A. I. Toropov, N. A. Valisheva, M. S. Aksenov, A. M. Gilinskii, I. B. Chistokhin, “High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 14,Pages <nobr>52

This article is cited in 11 papers

High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines

A. L. Chizh^a, K. B. Mikitchuk^a, K. S. Zhuravlev^bc, D. V. Dmitriev^bc, A. I. Toropov^b, N. A. Valisheva^b, M. S. Aksenov^b, A. M. Gilinskii^b, I. B. Chistokhin^b

^a SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus, Minsk, Belarus
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Novosibirsk State University

Abstract: Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 $\mu$m is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.

Keywords: high-power microwave photodiodes, Schottky barrier, InAlAs/InGaAs heterostructures.

Received: 04.03.2019
Revised: 17.04.2019
Accepted: 17.04.2019

DOI: 10.21883/PJTF.2019.14.48026.17764