M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 13,Pages <nobr>33

This article is cited in 1 paper

Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions

M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The current-voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of a diluted magnetic semiconductor (In,Fe)Sb are investigated. The current-voltage characteristics of the (In,Fe)Sb/$n$-GaAs and (In,Fe)Sb/$p$-GaAs structures are analyzed. The band diagrams of heterojunctions are described. It is shown that the studied structures are similar to structures with a Schottky barrier by the current transfer mechanism.

Keywords: diluted magnetic semiconductors, diode structures, A$^{3}$B$^{5}$ heteronanostructures, spin injection.

Received: 29.03.2019
Revised: 05.04.2019
Accepted: 05.04.2019

DOI: 10.21883/PJTF.2019.13.47955.17812