Study of multilayer thin film structures by Rutherford backscattering spectrometry

We have evaluated possibilities of using the method of Rutherford backscattering spectrometry (RBS) for depth profiling of multilayer thin-film structures containing nanodmensional layers of elements with close atomic masses. It is established that RBS measurements can ensure high precision determination of the composition of these multilayer structures, total film thickness, and thicknesses of separate layers. This ability can be used for the input quality control of multilayer structures used in micro- and nanotechnologies.