M. V. Maksimov, Yu. M. Shernyakov, F. I. Zubov, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, S. S. Rochas, E. S. Kolodeznyi, A. Yu. Egorov, A. E. Zhukov, “Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 <nobr>$\mu$</nobr>m spectral range based on phosphorous-free heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 11,Pages <nobr>20

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Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures

M. V. Maksimov^a, Yu. M. Shernyakov^ab, F. I. Zubov^a, I. I. Novikov^c, A. G. Gladyshev^c, L. Ya. Karachinsky^bd, D. V. Denisov^de, S. S. Rochas^c, E. S. Kolodeznyi^c, A. Yu. Egorov^c, A. E. Zhukov^ae

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Connector Optics LLC, St. Petersburg
^e Saint Petersburg Electrotechnical University "LETI"

Abstract: InGaAs/InGaAlAs laser diodes operating in the 1.55-$\mu$m spectral range are studied. It is demonstrated that a certain level of carbon doping (10$^{12}$ cm$^{-2}$ per a single quantum well) allows one to reduce the temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic temperature of threshold current and differential efficiency at temperatures from 16 to $\sim$50$^\circ$C. These changes are accompanied by an increase in threshold current density and a reduction in differential efficiency.

Keywords: semiconductor laser, quantum well, characteristic temperature, modulation doping.

Received: 07.03.2019
Revised: 07.03.2019
Accepted: 11.03.2019

DOI: 10.21883/PJTF.2019.11.47818.17778