P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, D. N. Romanovich, V. S. Golovin, S. O. Slipchenko, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 8,Pages <nobr>7

This article is cited in 2 papers

Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures

P. S. Gavrina^a, O. S. Soboleva^a, A. A. Podoskin^a, D. N. Romanovich^a, V. S. Golovin^a, S. O. Slipchenko^a, N. A. Pikhtin^a, T. A. Bagaev^b, M. A. Ladugin^b, A. A. Marmalyuk^b, V. A. Simakov^b

^a Ioffe Institute, St. Petersburg
^b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: A technique is proposed for determining the spatio-temporal dynamics of current in semiconductor heterostructures. This technique is based on the modulation of external radiation during passage through the crystal under study. Approbation of the technique was carried out on semiconductor laser-thyristor based on AlGaAs/InGaAs/GaAs heterostructures. The experimental results are in a good qualitative agreement with previous measurements of the spatio-temporal dynamics in the laser-thyristor.

Received: 28.12.2018
Revised: 23.01.2019
Accepted: 25.01.2019

DOI: 10.21883/PJTF.2019.08.47612.17662