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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 45, Issue 5, Pages 52–55 (Mi pjtf5519)

This article is cited in 3 papers

Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor

M. V. Dorokhina, P. B. Deminaa, A. V. Budanovb, Yu. N. Vlasovb, G. I. Kotovb, A. V. Zdoroveyshcheva, V. N. Trushina, B. N. Zvonkova

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Voronezh State University of Engineering Technologies

Abstract: Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an opportunity to enhance the circular polarization degree of diode emission. The observed increase in the polarization degree is attributed to the suppression of spin relaxation at the metal/semiconductor interface due to surface passivation and a reduction in the density of surface electron states as a result of processing in selenium vapor.

Received: 14.11.2018
Revised: 13.12.2018
Accepted: 13.12.2018

DOI: 10.21883/PJTF.2019.05.47400.17588


 English version:
Technical Physics Letters, 2019, 45:3, 235–238

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