P. V. Volkov, N. V. Vostokov, A. V. Goryunov, L. M. Kukin, V. Parshin, E. A. Serov, V. I. Shashkin, “Detectors based on low-barrier mott diodes and their characteristics in the 150–250 GHz range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 5,Pages <nobr>56

This article is cited in 5 papers

Detectors based on low-barrier mott diodes and their characteristics in the 150–250 GHz range

P. V. Volkov^a, N. V. Vostokov^a, A. V. Goryunov^a, L. M. Kukin^b, V. Parshin^b, E. A. Serov^b, V. I. Shashkin^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: The characteristics of millimeter-wavelength detectors based on planar Mott diodes with near-surface $\delta$-doping operating without a constant bias are discussed. These detectors have a volt–watt sensitivity of $\sim$1000 V/W with NEP $\sim$10 pW/Hz$^{1/2}$ in the 150–250 GHz range. The obtained estimates reveal the possibility of an additional order-of-magnitude enhancement of the performance characteristics of detectors with smaller areas of the diode barrier contact.

Received: 29.11.2018
Revised: 29.11.2018
Accepted: 13.12.2018

DOI: 10.21883/PJTF.2019.05.47401.17613