V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 4,Pages <nobr>24

This article is cited in 1 paper

Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching

V. V. Tregulov^a, V. G. Litvinov^b, A. V. Ermachikhin^b

^a Ryazan State University S. A. Esenin
^b Ryazan State Radio Engineering University

Abstract: Defects in the semiconductor structure of a photovoltaic converter (PVC) with a $p$–$n$ junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.

Received: 16.11.2018
Revised: 16.11.2018
Accepted: 21.11.2018

DOI: 10.21883/PJTF.2019.04.47332.17597