A. G. Gagarin, A. V. Tumarkin, E. N. Sapego, T. S. Kunkel', V. M. Stozharov, “BaTiO$_{3}$/LaSrMnO$_{3}$ heterostructure grown on sapphire for ferroelectric tunneling junctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 4,Pages 31

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BaTiO$_{3}$/LaSrMnO$_{3}$ heterostructure grown on sapphire for ferroelectric tunneling junctions

A. G. Gagarin^a, A. V. Tumarkin^a, E. N. Sapego^a, T. S. Kunkel'^bc, V. M. Stozharov^d

^a Saint Petersburg Electrotechnical University "LETI"
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg
^d Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: BaTiO$_{3}$/LaSrMnO$_{3}$ structures with a ferroelectric layer thickness of 10 nm have been formed on $r$-cut sapphire substrate by means of high-frequency magnetron sputtering. Investigations of the sample structure showed the presence of a crystalline phase, while measurements of electrical properties revealed piezoelectric response of the BTO films. The study of local current–voltage characteristics showed dependence of the sample resistance on the prehistory of voltage application as determined by ferroelectric hysteresis of the BTO layer.

Received: 16.11.2018
Revised: 16.11.2018
Accepted: 22.11.2018

DOI: 10.21883/PJTF.2019.04.47334.17599