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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 45, Issue 3, Pages 37–40 (Mi pjtf5550)

Solid-phase epitaxy of BiFeO$_{3}$ films with magnetoelectric properties on sapphire

A. È. Muslimov, A. V. Butashin, V. M. Kanevskii

FSRC "Crystallography and Photonics" RAS, Moscow, Russia

Abstract: The ferroelectric domain structure has been investigated in bismuth-ferrite rhombohedral phase films prepared on the rhombohedral plane of sapphire by solid-phase epitaxy. The piezoelectric modulus has been estimated to be $d_{33}\sim$ 2 pm/V. In films of the Bi$_{25}$FeO$_{39}$–BiFeO$_{3}$ and Bi$_{2}$Fe$_{4}$O$_{9}$–BiFeO$_{3}$ systems on sapphire, the magnetoelectric-switching effect has been observed in bismuth ferrite crystallites without deposition of exchange-coupled layers. The values of the magnetic moment in bismuth ferrite microcrystallites have been estimated.

Received: 15.05.2018

DOI: 10.21883/PJTF.2019.03.47271.17388


 English version:
Technical Physics Letters, 2019, 45:2, 96–99

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