N. A. Ivanov, O. V. Lobanov, V. V. Pashuk, M. O. Prygunov, K. G. Sizova, “Multiple upsets induced by protons in 90-nm SRAMs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 1,Pages <nobr>20

Multiple upsets induced by protons in 90-nm SRAMs

N. A. Ivanov^a, O. V. Lobanov^a, V. V. Pashuk^a, M. O. Prygunov^b, K. G. Sizova^c

^a The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"
^b LLC O2 Light Systems, St. Petersburg, 196084, Russia
^c LLC NPC Granat, St. Petersburg

Abstract: The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.

Received: 21.09.2018

DOI: 10.21883/PJTF.2019.01.47150.17534