L. S. Lunin, M. L. Lunina, A. E. Kazakova, A. S. Pashchenko, D. L. Alfimova, D. A. Arustamyan, “AlInGaPAs/GaAs/Si heterostructures for photoelectric converters fabricated by pulsed laser deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 24,Pages <nobr>75

This article is cited in 1 paper

AlInGaPAs/GaAs/Si heterostructures for photoelectric converters fabricated by pulsed laser deposition

L. S. Lunin^ab, M. L. Lunina^a, A. E. Kazakova^b, A. S. Pashchenko^a, D. L. Alfimova^a, D. A. Arustamyan^b

^a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
^b Platov South Russian Polytechnic University (NPI), Novocherkassk, Rostov oblast, Russia

Abstract: The pulsed laser deposition method has been used to fabricate AlInGaPAs/GaAs/Si nanoheterostructures for cascaded photoelectric converters operating at wavelengths in the range of 300–1300 nm. The structural and luminescent structures of AlInGaPAs nanofilms on GaAs and GaAs on Si were studied. The spectral characteristics of photocells in an AlInGaPAs/GaAs/Si triple-cascade photoelectric converter were examined.

Received: 24.09.2018

DOI: 10.21883/PJTF.2018.24.47033.17537