Features of switching memristor structures to a high-resistance state by sawtooth pulses

It has been experimentally established that the time of switching by triangular pulses in Ti–TiN–ZrO$_2$(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise rate, i.e., the bias current through the memristor structure. A mechanism for the influence of a bias current on the switching time of the structure has been proposed.