A. M. Buryakov, D. I. Khusyainov, E. D. Mishina, R. A. Khabibullin, A. E. Yachmenev, D. S. Ponomarev, “The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 23,Pages <nobr>146

This article is cited in 3 papers

The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures

A. M. Buryakov^a, D. I. Khusyainov^a, E. D. Mishina^a, R. A. Khabibullin^bc, A. E. Yachmenev^bc, D. S. Ponomarev^bc

^a MIREA — Russian Technological University, Moscow
^b Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
^c Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs superlattice heterostructures is analyzed. A model is built for the reflection coefficient of the InAlAs barrier layer, depending on the excitation photons energy. The resonance behavior of the reflection coefficient is explained.

Received: 24.07.2018

DOI: 10.21883/PJTF.2018.23.47022.17469