Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer

We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 $\mu$m. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pulse modulated amplitude are realized. The transition conditions between generation regimes are investigated. The frequency tuning range with current increase in the Q-switched regime exceeds more than 4 times. The duration of the mode-locked pulses was 2 ps at the pulse repetition rate of 44.3 GHz.