Amorphous films of ternary zinc and tin oxides for transparent electronics

Amorphous films of two varieties of zinc stannate (ZnSnO$_{3}$ и Zn$_{2}$SnO$_{4}$) have been considered that were fabricated by radio-frequency sputtering of ceramic compound targets containing ZnO and SnO$_2$ in 1: 1 and 2: 1 ratios. The elemental and phase compositions of the films and their optical and electrical parameters were determined. The transparency of the films in the visible spectral range is on average 87%. Zinc stannate amorphous films have a high electrical conductivity in contrast to amorphous ZnO and SnO$_2$. This phenomenon, which makes it possible to use zinc stannate amorphous films in transparent and flexible electronics, is explained.