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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 44, Issue 17, Pages 42–48 (Mi pjtf5706)

This article is cited in 7 papers

High-efficiency AlGaAs/GaAs photovoltaic converters with edge input of laser light

V. P. Khvostikov, P. V. Pokrovskii, O. A. Khvostikova, A. N. Panchak, V. M. Andreev

Ioffe Institute, St. Petersburg

Abstract: High-efficiency photovoltaic converters (PVCs) have been developed and fabricated by liquidphase epitaxy in the AlGaAs–GaAs system with laser light ($\lambda$ = 850 nm) introduced through the edge surface in parallel to the plane of the $p$$n$ junction of the device structure. To raise the efficiency of light “capture” by the $p$$n$ junction, an Al$_{x}$Ga$_{1-x}$As waveguide layer is formed, in which the content of aluminum gradually varies from $x$ = 0.55 to 0.15 so that the refractive index gradient is created in this layer and light beams are diverted toward the $p$$n$ junction. When a PVC (having no antireflection coating) is exposed to 0.1- to 0.2-W laser light, an efficiency of 41.5% is obtained. Depositing an antireflection coating on the edge surface of a PVC raises its efficiency to 55%.

Received: 23.05.2018

DOI: 10.21883/PJTF.2018.17.46569.17400


 English version:
Technical Physics Letters, 2018, 44:9, 776–778

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