V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-<nobr>$\mu$</nobr>m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 16,Pages <nobr>67

Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

V. Ya. Aleshkin^ab, N. V. Baidus^b, O. V. Vikhrova^b, A. A. Dubinov^ab, B. N. Zvonkov^b, Z. F. Krasil'nik^ab, K. E. Kudryavtsev^ab, S. M. Nekorkin^b, A. V. Novikov^ab, A. V. Rykov^b, I. V. Samartsev^b, D. V. Yurasov^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 $\mu$m. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 $\mu$m amounted to 250 kW/cm$^2$.

Received: 07.03.2018

DOI: 10.21883/PJTF.2018.16.46478.17282