Semipolar gan layers grown on nanostructured Si(100) substrate

We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (10$\bar1$1) epilayers deviating by an angle of about 62$^{\circ}$ from the polar direction and having an X-ray rocking curve with a minimum FWHM value of $\omega_\theta\sim$60 arcmin.