A precise algorithm of memristor switching to a state with preset resistance

An algorithm of memristor switching with high precision to a state with preset resistance has been developed based on the application of voltage pulses with smoothly increasing amplitude and the duration varying randomly within preset limits. It is shown that the proposed algorithm can be implemented in memristor structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ nanocomposites with $x\approx$ 10 at.%. Optimum parameters are selected for the algorithm operation with a minimum number of iterations that allows the accuracy of resistance setting to be no worse than 0.5%. The obtained results can be used in the creation of neuromorphic systems.