Abstract:
We have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated $n$-type Si–Ge films heavily doped with titanium obtained by chemical-vapor deposition on $p$-type silicon substrates. A maximum emf value of $\sim$3 mV was observed at temperatures within 500–600 K for dark short-circuit currents $\sim$0.5–1 $\mu$A, the value of which increased with the temperature to reach $\sim$3 $\mu$A at 800 K.