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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 44, Issue 8, Pages 57–62 (Mi pjtf5831)

This article is cited in 3 papers

Photovoltaic characteristics of AlGaAs-based LEDs

A. A. Sokolovskiĭ

Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences

Abstract: Photovoltaic characteristics of more than 20 types of AlGaAs-based light-emitting diodes operating in the 830- to 970-nm wavelength range have been considered. It is established that Al$_{x}$Ga$_{1-x}$As semiconductor structures employed in these devices can also be used for manufacturing photovoltaic converters of monochromatic radiation with quite high efficiency.

Received: 13.12.2017

DOI: 10.21883/PJTF.2018.08.45967.17154


 English version:
Technical Physics Letters, 2018, 44:4, 341–343

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